Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane

We found that the atomic-concentration-ratio of carbon to silicon (C/Si ratio) in carbide (SiC) films formed by thermal chemical vapor deposition (CVD) was much greater than 1 when source gas for CVD dimethylsilane (DMS). Thus, we tried change carbon-inclusion levels film injecting some ion beams into a depositing SiC during process with DMS. Three beams, i.e., Si+, SiCH5+, or C+ ions were injected films. The energy and 110 eV. temperature substrate 800 °C. X-ray diffraction deposited showed 3C–SiC included all three samples. photoelectron spectroscopy (XPS) C/Si ratio obtained increased significantly following Si+ beam irradiations. XPS measurements also SiCH5+ DMS lower alone.